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tm October 2007 ©2007 Fairchild Semiconductor Corporation HUF75344A3 Rev. A1 www.fairchildsemi.com 1 HUF75344A3 N-Channel UltraFET Power MOSFET 55V, 75A, 8m Ω Features •RDS(on) = 6.5mΩ ( Typ.)@ VGS = 10V, ID = 75A • RoHS compliant Description • This N-channel power MOSFET is produced using Fairchild Semiconductor’s innovative UItraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored change. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motro drives, relay drivers, low-voltage bus switches, and power manage- ment in portable and battery-operated products. D G S GS D TO-3PN MOSFET Maximum Ratings T C = 25 oC unless otherwise noted Thermal Characteristics Symbol Parameter Ratings Units VDSS Drain to Source Voltage 55 V VGSS Gate to Source Voltage ±20 V ID Drain Current -Continuous (TC = 130 oC) 75 A IDM Drain Current - Pulsed 300 A EAS Single Pulsed Avalanche Energy (Note 1) 1153 mJ PD Power Dissipation (TC = 25 oC) 288.5 W - Derate above 25oC1.92 W/oC TJ, TSTG Operating and Storage Temperature Range -55 to +175 oC TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 oC Symbol Parameter Ratings Units RθJC Thermal Resistance, Junction to Case 0.52 oC/W RθJA Thermal Resistance, Junction to Ambient 40 |
