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TLP250 Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part No. TLP250
Description  GaAℓAs Ired & Photo-IC
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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TLP250
2007-10-01
1
TOSHIBA Photocoupler GaAℓAs Ired & Photo−IC
TLP250
Transistor Inverter
Inverter For Air Conditioner
IGBT Gate Drive
Power MOS FET Gate Drive
The TOSHIBA TLP250 consists of a GaAlAs light emitting diode and a
integrated photodetector.
This unit is 8lead DIP package.
TLP250 is suitable for gate driving circuit of IGBT or power MOS FET.
• Input threshold current: IF=5mA(max.)
• Supply current (ICC): 11mA(max.)
• Supply voltage (VCC): 1035V
• Output current (IO): ±1.5A (max.)
• Switching time (tpLH/tpHL): 0.5μs(max.)
• Isolation voltage: 2500Vrms(min.)
• UL recognized: UL1577, file No.E67349
• Option(D4)
VDE Approved : DIN EN60747-5-2
Maximum Operating Insulation Voltage : 890VPK
Highest Permissible Over Voltage
: 4000VPK
(Note):When a EN60747-5-2 approved type is needed,
Please designate “Option(D4)”
Truth Table
Tr1
Tr2
On
On
Off
Input
LED
Off
Off
On
Unit in mm
TOSHIBA
11−10C4
Weight: 0.54 g(Typ.)
Pin Configuration (top view)
8
7
6
5
1 : N.C.
2 : Anode
3 : Cathode
4 : N.C.
1
2
3
4
5 : GND
6 : VO (Output)
7 : VO
8 : VCC
Schmatic
2+
VF
IF
3-
ICC
(Tr 1)
VO
GND
(Tr 2)
IO
VO
VCC
8
7
6
5
A 0.1μF bypass capcitor must be
connected between pin 8 and 5 (See Note 5).




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