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HN1A02F Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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HN1A02F Datasheet(HTML) 1 Page - Toshiba Semiconductor |
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1 / 3 page  HN1A02F 2007-11-22 1 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A02F Audio Frequency Power Amplifier Applications Switching applications High hFE : hFE(1) = 120~400 Low VCE(sat.) : VCE (sat) = −0.2 V (max.) (IC = −400 mA, IB = −8 mA) Small Power Motor Driver Application. Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base voltage VCBO −15 V Collector-emitter voltage VCEO −15 V Emitter-base voltage VEBO −5 V Collector current IC −800 mA Base current IB −160 mA Collector power dissipation PC* 300 mW Junction temperature Tj 150 °C Storage temperature range Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *Total rating. Power dissipation per element should not exceed 200mW. Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common) Characteristic Symbol Test Circuit Test Condition Min Typ. Max Unit Collector cut-off current ICBO ― VCB = −15V, IE = 0 ― ― −100 nA Emitter cut-off current IEBO ― VEB = −5V, IC = 0 ― ― −100 nA Collector-Emitter Brakedown Voltage V(BR)CEO IC = −10mA,IB= 0 −15 ― ― V hFE(1) (Note) ― VCE = −1V, IC = −100mA 120 ― 400 DC current gain hFE(2) VCE = −1V, IC = −800mA 40 ― ― Collector-emitter saturation voltage VCE (sat) ― IC = −400mA, IB = −8mA ― ― −0.2 V Base-Emitter voltage VBE VCE = −5V, IC = −10mA −0.5 ― −0.8 V Transition frequency fT ― VCE = −5V, IC = −10mA ― 120 ― MHz Collector output capacitance Cob ― VCB = −10V, IE = 0, f = 1MHz ― 13 ― pF Note: hFE Classification Y (Y): 120~240, GR (G): 200~400 ( ) Marking Symbol Marking Equivalent Circuit (Top View) 1.EMITTER1 2.BASE1 3.COLLECTOR2 4.EMITTER2 5.BASE2 6.COLLECTOR1 (E1) (B1) (C2) (E2) (B2) (C1) JEDEC ― EIAJ ― TOSHIBA 2-3N1A Weight: 0.015mg(typ) Unit: mm 26 |
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