GT40T301

2006-11-01

1

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT40T301

Parallel Resonance Inverter Switching Applications

• FRD included between emitter and collector

• Enhancement mode type

Characteristics

Symbol

Rating

Unit

Collector-emitter voltage

1500

V

Gate-emitter voltage

±25

V

DC

40

Collector current

1 ms

80

A

DC

30

Emitter-collector forward

current

1 ms

80

A

Collector power dissipation (Tc

=

25°C)

200

W

Junction temperature

150

°C

Storage temperature range

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Equivalent Circuit

Marking

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-21F2C

Weight: 9.75 g (typ.)

Collector

Gate

Emitter

GT40T301

TOSHIBA

JAPAN

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

Part No. (or abbreviation code)