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GT15Q301 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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GT15Q301 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 7 page GT15Q301 2006-11-01 1 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15Q301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.32 μs (Max.) Low saturation voltage : VCE (sat) = 2.7 V (Max.) FRD included between emitter and collector ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector−Emitter Voltage VCES 1200 V Gate−Emitter Voltage VGES ±20 V DC IC 15 A Collector Current 1ms ICP 30 A DC IF 15 A Emitter−Collector Forward Current 1ms IFM 30 A Collector Power Dissipation (Tc = 25°C) PC 170 W Junction Temperature Tj 150 °C Storage Temperature Range Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). EQUIVALENT CIRCUIT MARKING Unit: mm JEDEC ⎯ JEITA ⎯ TOSHIBA 2-16C1C Weight: 4.6 g (typ.) GT15Q301 TOSHIBA Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) |
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