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TC74HC02AP Datasheet(PDF) 4 Page - Toshiba Semiconductor

Part # TC74HC02AP
Description  CMOS Digital Integrated Circuit Silicon Monolithic Quad 2-Input NOR Gate
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC74HC02AP Datasheet(HTML) 4 Page - Toshiba Semiconductor

  TC74HC02AP_07 Datasheet HTML 1Page - Toshiba Semiconductor TC74HC02AP_07 Datasheet HTML 2Page - Toshiba Semiconductor TC74HC02AP_07 Datasheet HTML 3Page - Toshiba Semiconductor TC74HC02AP_07 Datasheet HTML 4Page - Toshiba Semiconductor TC74HC02AP_07 Datasheet HTML 5Page - Toshiba Semiconductor TC74HC02AP_07 Datasheet HTML 6Page - Toshiba Semiconductor TC74HC02AP_07 Datasheet HTML 7Page - Toshiba Semiconductor TC74HC02AP_07 Datasheet HTML 8Page - Toshiba Semiconductor  
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TC74HC02AP/AF/AFN
2007-10-01
4
AC Characteristics (CL = 50 pF, input: tr = tf = 6 ns)
Test Condition
Ta
= 25°C
Ta
= −40~85°C
Characteristics
Symbol
VCC
(V)
Min
Typ.
Max
Min
Max
Unit
Output transition time
tTLH
tTHL
2.0
4.5
6.0
25
7
6
75
15
13
95
19
16
ns
Propagation delay
time
tpLH
tpHL
2.0
4.5
6.0
27
9
8
75
15
13
95
19
16
ns
Input capacitance
CIN
5
10
10
pF
Power dissipation
capacitance
CPD
(Note)
21
pF
Note:
CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
ICC (opr) = CPD・VCC・fIN + ICC/4 (per gate)


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