GT15J311,GT15J311(SM)

2006-10-31

1

TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT

GT15J311, GT15J311(SM)

HIGH POWER SWITCHING APPLICATIONS

MOTOR CONTROL APPLICATIONS

Third-generation IGBT

Enhancement mode type

High speed

Low saturation voltage

FRD included between emitter and collector

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector−Emitter Voltage

600

V

Gate−Emitter Voltage

±20

V

DC

15

A

Collector Current

1ms

30

A

Emitter−Collector

DC

15

A

Forward Current

1ms

30

A

Collector Power Dissipation

(Tc = 25°C)

70

W

Junction Temperature

150

°C

Storage Temperature Range

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling

Precautions”/Derating Concept and Methods) and individual reliability

data (i.e. reliability test report and estimated failure rate, etc).

Equivalent Circuit

Marking

Unit: mm

JEDEC

⎯

JEITA

⎯

TOSHIBA

2-10S1C

Weight: 1.5 g (typ.)

JEDEC

⎯

JEITA

⎯

TOSHIBA

2-10S2C

Weight: 1.4 g (typ.)

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

15J311

Part No. (or abbreviation code)