GT10J303

2006-10-31

1

TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT

GT10J303

HIGH POWER SWITCHING APPLICATIONS

MOTOR CONTROL APPLICATIONS

Third-generation IGBT

Enhancement mode type

High speed

Low saturation voltage

FRD included between emitter and collector

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector−Emitter Voltage

600

V

Gate-Emitter Voltage

±20

V

DC

10

A

Collector Current

1ms

20

A

DC

10

A

Emitter−Collector Forward

Current

1ms

20

A

Collector Power Dissipation

(Tc = 25°C)

30

W

Junction Temperature

150

°C

Storage Temperature Range

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

EQUIVALENT CIRCUIT

MARKING

Unit: mm

JEDEC

⎯

JEITA

⎯

TOSHIBA

2-10R1C

Weight:

g (typ.)

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

10J303

Part No. (or abbreviation code)