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DF5A6.8FU Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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DF5A6.8FU Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 3 page DF5A6.8FU 2007-11-01 1 TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF5A6.8FU Product for Use Only as Protection against Electrostatic Discharge (ESD) * This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application. The mounting of four devices on an ultra-compact package allows the number of parts and the mounting cost to be reduced. Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Power dissipation P 200 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Zener voltage VZ IZ = 5 mA 6.4 6.8 7.2 V Dynamic impedance ZZ IZ = 5 mA ― 10 25 Ω Knee dynamic impedance ZZK IZ = 0.5 mA ― 30 ― Ω Reverse current IR VR = 5 V ― ― 0.5 μA Terminal capacitance (between Cathode and Anode) CT VR = 0, f = 1 MHz ― 45 ― pF Guaranteed Level of ESD Immunity Criterion: No damage to device elements Unit: mm JEDEC ⎯ JEITA ⎯ TOSHIBA 1-2V1B Weight: 0.0062 g (typ.) Test Condition ESD Immunity Level IEC61000-4-2 (Contact discharge) ±30kV |
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