DF5A5.6LJE

2007-11-01

1

TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type

DF5A5.6LJE

Product for Use Only as Protection against Electrostatic

Discharge (ESD).

* This product is for protection against electrostatic discharge (ESD)

only and is not intended for any other usage, including without

limitation, the constant voltage diode application.

• The mounting of four devices on an ultra-compact package allows the

number of parts and the mounting cost to be reduced.

Characteristics

Symbol

Rating

Unit

Power dissipation

P

100

mW

Junction temperature

150

°C

Storage temperature range

−50~150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Zener voltage

5.3

5.6

6.0

V

Dynamic impedance

⎯

⎯

50

Ω

Reverse current

⎯

⎯

1.0

μA

Terminal capacitance

(between Cathode and Anode)

⎯

8.0

⎯

pF

Guaranteed Level of ESD Immunity

Test Condition

ESD Immunity Level

IEC61000-4-2

(Contact discharge)

± 8 kV

Criterion: No damage to device elements

Unit: mm

1.CATHODE1

2.ANODE

3.CATHODE2

4.CATHODE3

5.CATHODE4

JEDEC

⎯

JEITA

⎯

TOSHIBA

1-2W1A

Weight: 0.003 g (typ.)