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TC7SZ86FU Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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TC7SZ86FU Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 7 page TC7SZ86F/FU 2007-11-01 1 TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SZ86F,TC7SZ86FU EXCLUSIVE OR Gate Features • High output drive: ±24 mA (min) at VCC = 3 V • Super high speed operation: tpd=2.9 ns (typ.) at VCC = 5 V, 50 pF • Operation voltage range: VCC (opr) = 1.8~5.5 V • 5.5-V tolerant inputs • 5.5-V power down protection output • Matches the performance of TC74LCX series when operated at 3.3- V VCC Marking Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Power supply voltage VCC −0.5~6 V DC input voltage VIN −0.5~6 V DC output voltage VOUT −0.5~6 V Input diode current IIK −20 mA Output diode current IOK −20 mA DC output current IOUT ±50 mA DC VCC/ground current ICC ±50 mA Power dissipation PD 200 mW Storage temperature Tstg −65~150 °C Lead temperature (10s) TL 260 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). TC7SZ86F TC7SZ86FU Weight SSOP5-P-0.95 : 0.016 g (typ.) SSOP5-P-0.65A : 0.006 g (typ.) Type name J 8 Pin Assignment (top view) IN B IN A GND 1 2 3 5 4 VCC OUT Y |
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