TC7SZ08F datasheet(3/7 Pages) TOSHIBA

Part #	TC7SZ08F

Description	2 Input AND Gate

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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3 / 7 page

TC7SZ08F/FU

2007-11-01

3

Electrical Characteristics

DC Characteristics

Ta

= 25°C

Ta

= −40~85°C

Characteristics

Symbol

Test Condition

VCC (V)

Min

Typ.

Max

Min.

Max.

Unit

1.8

VCC

× 0.88

⎯

VCC

× 0.88

⎯

High-level

input voltage

VIH

⎯

2.3~5.5

VCC

× 0.75

⎯

VCC

× 0.75

⎯

1.8

⎯

VCC

× 0.12

⎯

VCC

× 0.12

Low-level

input voltage

VIL

⎯

2.3~5.5

⎯

VCC

× 0.25

⎯

VCC

× 0.25

V

1.8

1.7

1.8

⎯

1.7

⎯

2.3

2.2

2.3

⎯

2.2

⎯

3.0

2.9

3.0

⎯

2.9

⎯

IOH = −100 μA

4.5

4.4

4.5

⎯

4.4

⎯

IOH = −8 mA

2.3

1.9

2.15

⎯

1.9

⎯

IOH = −16 mA

3.0

2.4

2.8

⎯

2.4

⎯

IOH = −24 mA

3.0

2.3

2.68

⎯

2.3

⎯

High-level

output voltage

VOH

VIN = VIH

IOH = −32 mA

4.5

3.8

4.2

⎯

3.8

⎯

1.8

⎯

0

0.1

⎯

0.1

2.3

⎯

0

0.1

⎯

0.1

3.0

⎯

0

0.1

⎯

0.1

IOL = 100 μA

4.5

⎯

0

0.1

⎯

0.1

IOL = 8 mA

2.3

⎯

0.1

0.3

⎯

0.3

IOL = 16 mA

3.0

⎯

0.15

0.4

⎯

0.4

IOL = 24 mA

3.0

⎯

0.22

0.55

⎯

0.55

Low-level

output voltage

VOL

VIN = VIH

or VIL

IOL = 32 mA

4.5

⎯

0.22

0.55

⎯

0.55

V

Input leakage current

IIN

VIN = 5.5 V or GND

0~5.5

⎯

±1

⎯

±10

μA

Power off leakage current

IOFF

VIN or VOUT = 5.5 V

0.0

⎯

1

⎯

10

μA

Quiescent supply current

ICC

VIN = VCC or GND

5.5

⎯

2

⎯

20

μA

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TC7SZ08F Datasheet(PDF) 3 Page - Toshiba Semiconductor

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