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MX29F022TPC-70 Datasheet(PDF) 8 Page - Macronix International

Part # MX29F022TPC-70
Description  2M-BIT[256K x 8]CMOS FLASH MEMORY
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Manufacturer  MCNIX [Macronix International]
Direct Link  http://www.macronix.com
Logo MCNIX - Macronix International

MX29F022TPC-70 Datasheet(HTML) 8 Page - Macronix International

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P/N:PM0556
REV. 0.6, DEC. 09, 1998
MX29F022T/B
The Automatic Block Erase does not require the device
to be entirely pre-programmed prior to executing the
Automatic Set-up Block Erase command and Automatic
Block Erase command. Upon executing the Automatic
Block Erase command, the device will automatically
program and verify the block(s) memory for an all-zero
data pattern. The system does not require to provide
any control or timing during these operations.
When the block(s) is automatically verified to contain an
all-zero pattern,a self-timed block erase and verification
begin. The erase and verification operations are
complete when the data on Q7 is "1" and the data on Q6
stops toggling for two consecutive read cycles, at which
time the device returns to the Read mode. The system
does not required to provide any control or timing
during these operations.
When using the Automatic Block Erase algorithm, note
that the erase automatically terminates when adequate
erase margin has been achieved for the memory array
(no erase verification command is required). Sector
erase is a six-bus cycle operation. There are two
"unlock" write cycles. These are followed by writing the
set-up command-80H. Two more "unlock" write cycles
are then followed by the sector erase command-30H.
The sector address is latched on the falling edge of WE,
while the command(data) is latched on the rising edge
of WE. Block addresses selected are loaded into
internal register on the sixth falling edge of WE. Each
successive block load cycle started by the falling edge
of WE must begin within 30ms from the rising edge of
the preceding WE. Otherwise, the loading period ends
and internal auto block erase cycle starts. (Monitor Q3
to determine if the sector erase timer window is still open,
see section Q3, Sector Erase Timer.) Any command
other than Block Erase (30H) or Erase Suspend (B0H)
during the time-out period resets the device to read
mode.
ERASE SUSPEND
This command is only valid while the state machine is
executing Automatic Block Erase operation, and
therefore will only be responded during Automatic/Block
Erase operation. Writing the Erase Suspend command
during the Block Erase time-out immediately terminates
the time-out period and suspends the erase operation.
After this command has been executed, the command
register will initiate erase suspend mode. The state
machine will return to read mode automatically after
suspend is ready. At this time, state machine only
allows the command register to respond to the Read
Memory Array, Erase Resume and Program commands.
The system can determine the status of the program
operation using the Q7 or Q6 status bits, just as in the
standard program operation. After an erase-suspendend
program operation is complete, the system can once
again read array data within non-suspended blocks.
Table 4. Write Operation Status
Mode
Q7
Q6
Q5
Q3
Q2
(Note 1)
(Note 2)
(Note 1)
Standard Mode
Auto Program Algorithm
Q7
Toggle
0
N/A
No Toggle
Auto Erase Algorithm
0
Toggle
0
1
Toggle
Exceed Time Limits
Auto Program
Q7
Toggle
1
0
No Toggle
Auto Sector/Chip Erase
0
Toggle
1
0
N/A
Erase Suspend Mode Reading within Erase Suspended
1
No toggle
0
N/A
Toggle
Sector
Reading within Non-Erase
Data
Data
Data
Data
Data
Suspended Sector
Earse-Suspend-Program
Q7
Toggle
0
N/A
N/A
Note:
1. Q7 and Q2 require a valid address when reading status information. Refer to the appropriate subsection for
further details.
2. Q5 switches to '1' when an Auto Program or Auto Erase operation has exceeded the maximum timing limits.
See "Q5:Exceeded Timing Limits " for more information.
SET-UP AUTOMATIC BLOCK ERASE
COMMANDS
INDEX


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