CRH01

2006-11-08

1

TOSHIBA High Efficiency Rectifier Silicon Epitaxial Type

CRH01

Switching Mode Power Supply Applications

• Suitable for compact assembly due to small surface-mount package

Characteristics

Symbol

Rating

Unit

Repetitive peak reverse voltage

200

V

Average forward current

1.0

A

Peak one cycle surge forward current

(non-repetitive)

15 (50 Hz)

A

Junction temperature

−40~150

°C

Storage temperature range

−40~150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

⎯

0.71

⎯

⎯

0.86

⎯

Peak forward voltage

⎯

0.90

0.98

V

Repetitive peak reverse current

⎯

⎯

10

μA

Reverse recovery time

⎯

⎯

35

ns

Forward recovery time

⎯

⎯

100

ns

Device mounted on a ceramic board

(soldering land: 2 mm

× 2 mm)

⎯

⎯

65

Thermal resistance

Device mounted on a glass-epoxy board

(soldering land: 6 mm

× 6 mm)

⎯

⎯

130

°C/W

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

3-2A1A

Weight: 0.013 g (typ.)