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3.1 - 139
3.1
500 Volt, 5 And 10 Amp, N-Channel IGBT
In A Hermetic Metal Package
4 11 R2
Supersedes 2 07 R1
INSULATED GATE BIPOLAR TRANSISTOR
(IGBT) IN A HERMETIC TO-257AA PACKAGE
OM6501ST
OM6502ST
FEATURES
• Isolated Hermetic Metal Package
• High Input Impedance
• Low On-Voltage
• High Current Capability
• Fast Turn-Off
• Low Conductive Losses
• Available Screened to MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
The IGBT power transistor features a high impedance insulated gate and a low
on-resistance characteristic of bipolar transistors. These devices are ideally suited
for motor drives, UPS converters, power supplies and resonant power converters.
MAXIMUM RATINGS @ 25°C Unless Specified Otherwise
PART
I
C (Cont.)
V
(BR)CES
V
CE (sat) (Typ.)
T
f (Typ.)
q
q
JC
P
D
T
J
NUMBER
@ 90°C, A
V
V
ns
°C/W
W
°C
OM6501ST
5
500
2.8
400
3.8
35
150
OM6502ST
10
500
2.8
400
3.0
42
150
SCHEMATIC
MECHANICAL OUTLINE
PACKAGE OPTIONS
.430
.410
.200
.190
.038 MAX.
.005
.120 TYP.
.537
.527
.665
.645
.420
.410
.150
.140
.750
.500
.100 TYP.
.035
.025
.045
.035
Pin 1: Collector
Pin 2: Emitter
Pin 3: Gate
Collector
Emitter
12 3
CE G
Gate
Note: IGBTs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information.
MOD PAK
6 PIN SIP