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H11G1SVM Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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H11G1SVM Datasheet(HTML) 3 Page - Fairchild Semiconductor |
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3 / 8 page  ©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com H11GXM Rev. 1.0.0 3 Electrical Characteristics (T A = 25°C unless otherwise specified.) Individual Component Characteristics Transfer Characteristics Isolation Characteristics *All Typical values at TA = 25°C Symbol Characteristic Test Conditions Device Min. Typ.* Max. Unit EMITTER VF Forward Voltage IF = 10mA All 1.3 1.50 V ∆VF ∆TA Forward Voltage Temp. Coefficient All -1.8 mV/°C BVR Reverse Breakdown Voltage IR = 10µA All 3.0 25 V CJ Junction Capacitance VF = 0V, f = 1MHz All 50 pF VF = 1V, f = 1MHz 65 IR Reverse Leakage Current VR = 3.0V All 0.001 10 µA DETECTOR BVCEO Breakdown Voltage Collector to Emitter IC = 1.0mA, IF = 0 H11G1M 100 V H11G2M 80 H11G3M 55 BVCBO Collector to Base IC = 100µA H11G1M 100 V H11G2M 80 H11G3M 55 BVEBO Emitter to Base All 7 10 V ICEO Leakage Current Collector to Emitter VCE = 80V, IF = 0 H11G1M 100 nA VCE = 60V, IF = 0 H11G2M VCE = 30V, IF = 0 H11G3M VCE = 80V, IF = 0, TA = 80°C H11G1M 100 µA VCE = 60V, IF = 0, TA = 80°C H11G2M Symbol Characteristics Test Conditions Device Min. Typ.* Max. Units EMITTER CTR Current Transfer Ratio, Collector to Emitter IF = 10mA, VCE = 1V H11G1M/2M 100 (1000) mA (%) IF = 1mA, VCE = 5V H11G1M/2M 5 (500) H11G3M 2 (200) VCE(SAT) Saturation Voltage IF = 16mA, IC = 50mA H11G1M/2M 0.85 1.0 V IF = 1mA, IC = 1mA H11G1M/2M 0.75 1.0 IF = 20mA, IC = 50mA H11G3M 0.85 1.2 SWITCHING TIMES tON Turn-on Time RL = 100Ω, IF = 10mA, VCE = 5V, f ≤ 30Hz, Pulse Width ≤ 300µs All 5 µs tOFF Turn-off Time All 100 µs Symbol Characteristic Test Conditions Device Min. Typ.* Max. Units VISO Isolation Voltage f = 60Hz, t = 1 sec. All 7500 VACPEAK RISO Isolation Resistance VI-O = 500 VDC All 1011 Ω CISO Isolation Capacitance f = 1MHz All 0.2 pF |
Similar Part No. - H11G1SVM |
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