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30GWJ2CZ47C Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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30GWJ2CZ47C Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page 30GWJ2CZ47C 2006-11-10 1 TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 30GWJ2CZ47C SWITCHING MODE POWER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM = 40 V Average Output Rectified Current : IO = 30 A Low Switching Losses and Output Noise ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Repetitive Peak Reverse Voltage VRRM 40 V Repetitive Peak Reverse Surge Voltage (Note 1) VRRSM 48 V Average Output Rectified Current IO 30 A 300 (50Hz) Peak One Cycle Surge Forward Current (Sine Wave) IFSM 330 (60Hz) A Junction Temperature Tj −40~125 °C Storage Temperature Range Tstg −40~150 °C Screw Torque ― 0.6 N·m Note 1: Pulse Width (tw) ≤500ns, duty (tw / T) ≤1 / 25 Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX Peak Forward Voltage (Note 3) VFM IFM = 15A ― 0.55 V Repetitive Peak Reverse Current (Note 3) IRRM VRRM = Rated ― 15 mA Junction Capacitance (Note 3) Cj VR = 10V, f = 1.0MHz 600 ― pF Thermal Resistance Rth (j−c) Total DC, Junction to Case ― 2.5 °C/ W Note 3: A value applied to one cell. POLARITY Unit: mm JEDEC ― JEITA ― TOSHIBA 12-10C1A Weight: 2.0 g (typ.) |
Similar Part No. - 30GWJ2CZ47C_06 |
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Similar Description - 30GWJ2CZ47C_06 |
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