ND431825 datasheet(3/4 Pages) POWEREX

Part #	ND431825

Description	POW-R-BLOK Dual SCR Isolated Module (250 Amperes / 1800 Volts)

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Manufacturer	POWEREX [Powerex Power Semiconductors]

Direct Link	http://www.pwrx.com

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Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 (724) 925-7272

POW-R-BLOK

TM

Dual SCR Isolated Module

250 Amperes / 1800 Volts

Revision Date: 11/1/2001

ND431825

Electrical Characteristics, TJ=25°C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Max.

Units

Repetitive Peak Forward Leakage Current

IDRM

1800V, TJ=130°C

50

mA

Repetitive Peak Reverse Leakage Current

IRRM

1800V, TJ=130°C

50

mA

Peak On-State Voltage

VFM

ITM=625A

1.40

V

Threshold Voltage, Low-level

Slope Resistance, Low-level

V(TO)1

rT1

TJ = 130°C, I = 15%IT(AV) to πIT(AV)

0.877

0.731

V

mΩ

Threshold Voltage, High-level

Slope Resistance, High-level

V(TO)2

rT2

TJ = 130°C, I = πIT(AV) to ITSM

1.125

0.377

V

mΩ

VTM Coefficients, Full Range

TJ = 130°C, I = 15%IT(AV) to ITSM

VTM = A+ B Ln I +C I + D Sqrt I

A =

B =

C =

D =

0.695

4.272E-02

2.951E-04

8.766E-03

Minimum dV/dt

dV/dt

Exponential to 2/3 VDRM

Tj=130°C, Gate Open

500

V/µs

Turn-On Time (Typical)

ton

ITM = 100A, VD = 100V

7

(Typical)

µs

Turn-Off Time (Typical)

t off

TJ = 130°C, IT= 250A

Re-Applied dV/dt = 20V/µs

Linear to 0.8 VDRM

150

(Typical)

µs

Gate Trigger Current

IGT

Tj=25°C, VD=12V

150

mA

Gate Trigger Voltage

VGT

Tj=25°C, VD=12V

3.0

Volts

Non-Triggering Gate Voltage

VGDM

Tj=130°C, VD= ½ VDRM

0.15

Volts

Thermal Characteristics

Characteristics

Symbol

Max.

Units

Thermal Resistance, Junction to Case

RΘJ-C

Per Module, both conducting

Per Junction both conducting

0.07

0.14

°C/W

Thermal Impedance Coefficients

ZΘJ-C

ZΘJ-C= K1 (1-exp(-t/

τ1))

+ K2 (1-exp(-t/

τ2))

+ K3 (1-exp(-t/

τ3))

+ K4 (1-exp(-t/

τ4))

K1 = 5.27E-3

K2 = 1.17E-2

K3 = 5.26E-2

K4 = 6.97E-2

τ1 = 1.69E-4

τ2 = 2.07E-2

τ3 = 2.37E-1

τ4 = 2.46

Thermal Resistance, Case to Sink Lubricated

RΘC-S

Per Module

0.03

°C/W

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