AON3814 datasheet(2/4 Pages) AOSMD

Part #	AON3814

Description	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

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Manufacturer	AOSMD [Alpha & Omega Semiconductors]

Direct Link	http://www.aosmd.com

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AON3814

Symbol

Min

Typ

Max

Units

BVDSS

20

V

1

TJ=55°C

5

IGSS

10

µA

BVGSO

±12

V

VGS(th)

0.4

0.71

1.1

V

ID(ON)

30

A

11

14

17

TJ=125°C

15

19

24

11.5

15

18.5

m

Ω

14.5

19

24

23

30

39

m

Ω

gFS

25

S

VSD

0.75

1

V

IS

3.5

A

Ciss

1315

pF

Coss

219

pF

Crss

183

pF

Rg

2.1

k

Ω

Qg

13.1

nC

Qgs

6.7

nC

Qgd

4.6

nC

tD(on)

1

µs

tr

2.8

µs

tD(off)

5.6

µs

tf

5.9

µs

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

Gate-Source Breakdown Voltage

VDS=0V, IG=±250µA

VGS=2.5V, ID=6A

Turn-On DelayTime

DYNAMIC PARAMETERS

VGS=0V, VDS=10V, f=1MHz

Gate Drain Charge

Reverse Transfer Capacitance

Turn-On Rise Time

Turn-Off DelayTime

VGS=5V, VDS=10V, RL=1.7Ω,

RGEN=3Ω

Gate resistance

VGS=0V, VDS=0V, f=1MHz

Turn-Off Fall Time

SWITCHING PARAMETERS

Total Gate Charge

VGS=4.5V, VDS=10V, ID=6A

Gate Source Charge

m

Ω

VGS=1.8V, ID=6A

IS=1A,VGS=0V

VDS=5V, ID=6A

VGS=4V, ID=6A

VGS=4.5V, ID=6A

RDS(ON)

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

IDSS

µA

Gate Threshold Voltage

VDS=VGS ID=250µA

Drain-Source Breakdown Voltage

On state drain current

ID=250µA, VGS=0V

VGS=4.5V, VDS=5V

VDS=20V, VGS=0V

Zero Gate Voltage Drain Current

VDS=0V, VGS=±10V

Gate-Body leakage current

A: The value of RθJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C.

The value in any given application depends on the user's specific board design.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.

D. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with

T A=25°C. The SOA curve provides a single pulse rating.

F. The power dissipation and current rating is based on the t ≤ 10s thermal resistance, and current rating is also limited by wire-bonding.

Rev 2:Sep 2007

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

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