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6N136 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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6N136 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
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3 / 8 page  6N135,6N136 2007-10-01 3 Electrical Characteristics Over Recommended Temperature (Ta = 0°C~70°C unless otherwise noted) Characteristic Symbol Test Condition Min. (**)Typ. Max. Unit 6N135 7 18 ― % 6N136 CTR IF = 16mA, VO = 0.4V VCC = 4.5V, Ta = 25°C (Note 8) 19 24 ― % 6N135 5 13 ― % Current transfer ratio 6N136 CTR IF = 16mA, VO = 0.5V VCC = 4.5V (Note 1) 15 21 ― % 6N135 IF = 16mA, IO = 1.1mA VCC = 4.5V ― 0.1 0.4 V Logic low output voltage 6N136 VOL IF = 16mA, IO = 2.4mA VCC = 4.5V ― 0.1 0.4 V IF = 0mA, VO = VCC = 5.5V Ta = 25°C ― 3 500 nA IOH IF = 0mA, VO = VCC = 15V Ta = 25°C ― 0.1 1 μA Logic high output current IOH IF = 0 mA, VO = VCC = 15V ― ― 50 μA Logic low supply current ICCL IF = 16mA, VO = open VCC = 15V ― 40 ― μA ICCH IF = 0mA, VO = open VCC = 15V, Ta = 25°C ― 0.01 1 μA Logic high supply current ICCH IF = 0mA, VO = open VCC = 15V ― ― 2 μA Input forward voltage VF IF = 16mA, Ta = 25°C ― 1.65 1.7 V Temperature coefficient of forward voltage ΔVF / ΔTa IF = 16mA ― −1.9 ― mV / °C Input reverse breakdown voltage BVR IR = 10μA, Ta = 25°C 5 ― ― V Input capacitance CIN f = 1MHz, VF = 0 ― 60 ― pF Resistance (input −output) RI−O VI−O = 500V (Note 9) R.H. ≤ 60% ― 10 12 ― Ω Capacitance (input −output) CI−O f = 1MHz (Note 9) ― 0.6 ― pF Transistor DC current gain hFE VO = 5V, IO = 3mA ― 80 ― ― (**) All typicals at Ta = 25°C |
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