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2SK4017 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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2SK4017 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 6 page 2SK4017 2006-11-20 4 Vth − Tc Case temperature Tc (°C) Total gate charge Qg (nC) Capacitance – VDS Drain-source voltage VDS (V) RDS (ON) − Ta Ambient temperature Ta (°C) IDR − VDS Drain-source voltage VDS (V) Case temperature Tc (°C) Dynamic input / output characteristics Common source ID = 5 A Tc = 25°C Pulse test 40 0 30 20 10 0 20 30 10 10 5 20 0 15 0 0.2 0.05 0.1 −40 −80 160 0 40 120 80 0.15 Common source Pulse test −0.2 0 −0.4 −0.6 −0.8 0.1 10 1 −1.0 −1.2 10 0.1 100 100 1 10 1000 Common source VGS = 0 V f = 1 MHz Tc = 25°C 10000 1 −80 0 40 80 120 160 −40 2.6 1.4 1.8 2.2 Common source VDS = 10 V ID = 1mA Pulse test 15 25 5 50 25 VGS = 10 V VGS = 4 V ID = 5A 1.2 1.2 5 2.5 2.5 VGS = 0 V 1 10 5 3 Ciss Coss Crss VDD = 48V 24V 12V VDS VGS Common source Tc = 25°C Pulse test |
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