RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227

2007-11-01

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1221,RN1222,RN1223,RN1224

RN1225,RN1226,RN1227

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

With built-in bias resistors.

Simplify circuit design

Reduce a quantity of parts and manufacturing process

Complementary to RN2221~2227

Equivalent Circuit

Characteristic

Symbol

Rating

Unit

Collector-base voltage

50

V

Collector-emitter voltage

RN1221~1227

50

V

RN1221~1224

10

RN1225, 1226

5

Emitter-base voltage

RN1227

6

V

Collector current

800

mA

Collector power dissipation

300

mW

Junction temperature

150

°C

Storage temperature range

RN1221~1227

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

JEDEC

―

EIAJ

―

TOSHIBA

2-4E1A

Weight: 0.13g

Unit: mm

Type No.

R1 (kΩ)R2 (kΩ)

RN1221

1

1

RN1222

2.2

2.2

RN1223

4.7

4.7

RN1224

10

10

RN1225

0.47

10

RN1226

1

10

RN1227

2.2

10