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2SK3857TV Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part # 2SK3857TV
Description  Silicon N Channel Junction Type For ECM
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK3857TV Datasheet(HTML) 3 Page - Toshiba Semiconductor

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2SK3857TV
2007-11-01
3
IDSS=150μA
IDSS=330μA
Ta=85℃
Ta=25℃
Ta=-40℃
Gate - Source voltage VGS (V)
ID – VGS
Drain Current IDSS (µA)
|Yfs| – IDSS
0
3
1
2
400
500
Drain Current IDSS (µA)
VGS(OFF) – IDSS
Gate - Source voltage VGS (V)
ID – VGS
0
600
-1.0
-0.8
-0.6
-0.4
-0.2
300
100
200
0
400
500
VDS
=2V
Common Source
Ta
= 25 °C
0
600
-1.0
-0.8
-0.6
-0.4
-0.2
300
100
200
0
400
500
VDS
=2V
Common Source
100
200
300
600
|Yfs|:VDS
=2V
VGS
=0V
IDSS: VDS
=2V
VGS
=0V
Common Source
Ta
= 25 °C
400
500
0
0
-100
-200
-300
-400
100
200
300
600
400
500
VGS(OFF):VDS
=2V
ID
= 1μA
IDSS:VDS
=2V
VGS
=0V
Common Source
Ta
= 25 °C
-500
Drain - Source voltage VDS (V)
ID – VDS
0
600
0
300
100
200
2.0
400
500
1.0
Common Source
Ta
= 25 °C
IDSS=170μA
VGS = 0 V
– 0.05 V
+ 0.1 V
+ 0.05 V
– 0.1 V
Drain - Source voltage VDS (V)
ID – VDS
0
600
0
300
100
200
2.0
400
500
1.0
Common Source
Ta
= 25 °C
IDSS=330μA
VGS = 0 V
– 0.05 V
+ 0.1 V
+ 0.05 V
– 0.1 V


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