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MT4S101T Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # MT4S101T
Description  UHF Low Noise Amplifier Application
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

MT4S101T Datasheet(HTML) 2 Page - Toshiba Semiconductor

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MT4S101T
2007-11-01
2
Microwave Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Transition Frequency
fT
VCE=2V, IC=7mA, f=2GHz
18
23
GHz
Insertion Gain
|S21e|
2
VCE=2V, IC=7mA, f=2GHz
14.5
17.0
dB
Noise Figure
NF
VCE=2V, IC=5mA, f=2GHz
0.8
1.05
dB
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector Cut-off Current
ICBO
VCB=6V, IE=0
1
µA
Emitter Cut-off Current
IEBO
VEB=1V, IC=0
1
µA
DC Current Gain
hFE
VCE=2V, IC=7mA
200
400
-
Output Capacitance
Cob
VCB=2V, IE=0, f=1MHz
0.34
0.6
pF
Reverse Transfer Capacitance
Cre
VCB=2V, IE=0, f=1MHz (Note 1)
0.10
0.2
pF
Note 1: Cre is measured by 3 terminal method with capacitance bridge.
Caution:
This device is sensitive to electrostatic discharge due to applied the high frequency transistor
process of fT=60GHz class is used for this product.
Please make enough tool and equipment earthed when you handle.


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