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MT4S101T Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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MT4S101T Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 5 page MT4S101T 2007-11-01 2 Microwave Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Transition Frequency fT VCE=2V, IC=7mA, f=2GHz 18 23 ⎯ GHz Insertion Gain |S21e| 2 VCE=2V, IC=7mA, f=2GHz 14.5 17.0 ⎯ dB Noise Figure NF VCE=2V, IC=5mA, f=2GHz ⎯ 0.8 1.05 dB Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector Cut-off Current ICBO VCB=6V, IE=0 ⎯ ⎯ 1 µA Emitter Cut-off Current IEBO VEB=1V, IC=0 ⎯ ⎯ 1 µA DC Current Gain hFE VCE=2V, IC=7mA 200 ⎯ 400 - Output Capacitance Cob VCB=2V, IE=0, f=1MHz ⎯ 0.34 0.6 pF Reverse Transfer Capacitance Cre VCB=2V, IE=0, f=1MHz (Note 1) ⎯ 0.10 0.2 pF Note 1: Cre is measured by 3 terminal method with capacitance bridge. Caution: This device is sensitive to electrostatic discharge due to applied the high frequency transistor process of fT=60GHz class is used for this product. Please make enough tool and equipment earthed when you handle. |
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