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SSM3J109TU Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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SSM3J109TU Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 5 page SSM3J109TU 2007-11-01 2 Switching Time Test Circuit (a) Test circuit (b) VIN Marking Equivalent Circuit (top view) Notice on Usage Vth can be expressed as the voltage between gate and source when the low operating current value is ID = -1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. (c) VOUT VDD = − 10 V RG = 4.7 Ω Duty ≦ 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C IN 0 −2.5V 10 μs VDD OUT RL ton 90% 10% −2.5 V 0 V 90% 10% toff tr tf VDS (ON) VDD JJ2 1 2 3 1 2 3 |
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