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MT4S06 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # MT4S06
Description  VHF~UHF Band Low Noise Amplifier Applications
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

MT4S06 Datasheet(HTML) 2 Page - Toshiba Semiconductor

  MT4S06_07 Datasheet HTML 1Page - Toshiba Semiconductor MT4S06_07 Datasheet HTML 2Page - Toshiba Semiconductor MT4S06_07 Datasheet HTML 3Page - Toshiba Semiconductor  
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MT4S06
2007-11-01
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 5 V, IE = 0
⎯
⎯
0.1
μA
Emitter cut-off current
IEBO
VEB = 1 V, IC = 0
⎯
⎯
1
μA
DC current gain
hFE
VCE = 1 V, IC = 5 mA
70
⎯
140
Reverse transfer capacitance
Cre
VCB = 1 V, IE = 0, f = 1 MHz
(Note)
⎯
0.23
0.7
pF
Note: Cre is measured by 3 terminal method with capacitance bridge.
Caution
This device is sensitive to electrostatic discharge. Please handle with caution.


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