MT3S41T

2007-11-01

1

TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE

MT3S41T

VCO OSCILLETOR STAGE

UHF LOW NOISE AMPLIFIER APPLICATION

FEATURES

• Low Noise Figure :NF=1.2dB (@f=2GHz)

Marking

Characteristics

Symbol

Rating

Unit

Collector-Base voltage

8

V

Collector-Emitter voltage

4.5

V

Emitter-Base voltage

1.5

V

Collector-Current

80

mA

Base-Current

40

mA

Collector Power dissipation

100

mW

Junction temperature

150

°C

Storage temperature Range

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Unit: mm

TESM

JEDEC

―

JEITA

―

TOSHIBA

2-1B1A

Weight:0.0022g (typ.)

3

1

2

Q 7