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MP4304 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # MP4304
Description  High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

MP4304 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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MP4304
2006-10-27
2
Marking
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance from junction to
ambient
(4-device operation, Ta = 25°C)
ΣRth (j-a)
28.4
°C/W
Maximum lead temperature for
soldering purposes
(3.2 mm from case for 10 s)
TL
260
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 80 V, IE = 0 A
10
μA
Emitter cut-off current
IEBO
VEB = 7 V, IC = 0 A
10
μA
Collector-base breakdown voltage
V (BR) CBO
IC = 1 mA, IE = 0 A
80
V
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0 A
80
V
hFE (1)
VCE = 2 V, IC = 1 A
600
DC current gain
hFE (2)
VCE = 2 V, IC = 2 A
150
Collector-emitter
VCE (sat)
IC = 1.5 A, IB = 15 mA
0.25
0.5
Saturation voltage
Base-emitter
VBE (sat)
IC = 1.5 A, IB = 15 mA
1.2
V
Transition frequency
fT
VCE = 2 V, IC = 0.1 A
85
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0 A, f = 1 MHz
50
pF
Turn-on time
ton
0.4
Storage time
tstg
2.6
Switching time
Fall time
tf
IB1 = −IB2 = 15 mA, duty cycle ≤ 1%
1.3
μs
Flyback-Diode Rating and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Maximum forward current
IFM
3
A
Reverse current
IR
VR = 80 V
0.4
μA
Reverse voltage
VR
IR = 100 μA
80
V
Forward voltage
VF
IF = 1 A
1.5
V
20 μs
VCC = 30 V
Output
IB2
IB1
Input
MP4304
JAPAN
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)


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