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MP4304 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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MP4304 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 5 page MP4304 2006-10-27 2 Marking Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance from junction to ambient (4-device operation, Ta = 25°C) ΣRth (j-a) 28.4 °C/W Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) TL 260 °C Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 80 V, IE = 0 A ― ― 10 μA Emitter cut-off current IEBO VEB = 7 V, IC = 0 A ― ― 10 μA Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IE = 0 A 80 ― ― V Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 A 80 ― ― V hFE (1) VCE = 2 V, IC = 1 A 600 ― ― DC current gain hFE (2) VCE = 2 V, IC = 2 A 150 ― ― ― Collector-emitter VCE (sat) IC = 1.5 A, IB = 15 mA ― 0.25 0.5 Saturation voltage Base-emitter VBE (sat) IC = 1.5 A, IB = 15 mA ― ― 1.2 V Transition frequency fT VCE = 2 V, IC = 0.1 A ― 85 ― MHz Collector output capacitance Cob VCB = 10 V, IE = 0 A, f = 1 MHz ― 50 ― pF Turn-on time ton ― 0.4 ― Storage time tstg ― 2.6 ― Switching time Fall time tf IB1 = −IB2 = 15 mA, duty cycle ≤ 1% ― 1.3 ― μs Flyback-Diode Rating and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Maximum forward current IFM ― ― ― 3 A Reverse current IR VR = 80 V ― ― 0.4 μA Reverse voltage VR IR = 100 μA 80 ― ― V Forward voltage VF IF = 1 A ― ― 1.5 V 20 μs VCC = 30 V Output IB2 IB1 Input MP4304 JAPAN Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) |
Similar Part No. - MP4304_07 |
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Similar Description - MP4304_07 |
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