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2SK3475 Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part # 2SK3475
Description  Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK3475 Datasheet(HTML) 1 Page - Toshiba Semiconductor

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2SK3475
2007-2-19
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK3475
VHF- and UHF-band Amplifier Applications
(Note)The TOSHIBA products listed in this document are intended for high
frequency Power Amplifier of telecommunications equipment.These
TOSHIBA products are neither intended nor warranted for any other
use.Do not use these TOSHIBA products listed in this document except for
high frequency Power Amplifier of telecommunications equipment.
• Output power: PO = 630 mW (min)
• Gain: GP = 14.9dB (min)
• Drain efficiency: ηD = 45% (min)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
20
V
Gain-source voltage
VGSS
10
V
Drain current
ID
1
A
Power dissipation
PD (Note 1)
3
W
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−45~150
°C
Note 1: Tc = 25°C (When mounted on a 1.6 mm glass epoxy PCB)
Marking
Caution:
This device is sensitive to electrostatic discharge.
Please make enough tool and equipment earthed when you handle.
Unit: mm
JEDEC
JEITA
SC-62
TOSHIBA
2-5K1D
1
W
B
23
1. Gate
2. Source
3. Drain
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
Lot No.


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