MP4013

2006-10-27

1

TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type

(Four Darlington Power Transistors 4 in One)

MP4013

High Power Switching Applications

Hammer Drive, Pulse Motor Drive and Inductive Load

Switching

• Small package by full molding (SIP 10 pins)

• High collector power dissipation (4-device operation)

• Zener diode included between collector and base.

Characteristics

Symbol

Rating

Unit

Collector-base voltage

80 ± 10

V

Collector-emitter voltage

80 ± 10

V

Emitter-base voltage

8

V

DC

2

Collector current

Pulse

3

A

Continuous base current

0.5

A

Collector power dissipation

(1-device operation)

2.0

W

Collector power dissipation

(4-device operation)

4.0

W

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Array Configuration

Industrial Applications

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-25A1A

Weight: 2.1 g (typ.)

3

2

1

R1 R2

5

4

7

9

10

R1 ≈ 5 kΩ

R2 ≈ 300 Ω

6

8