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MP4013 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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MP4013 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page MP4013 2006-10-27 1 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Four Darlington Power Transistors 4 in One) MP4013 High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching • Small package by full molding (SIP 10 pins) • High collector power dissipation (4-device operation) : PT = 4 W (Ta = 25°C) • High collector current: IC (DC) = 2 A (max) • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Zener diode included between collector and base. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 ± 10 V Collector-emitter voltage VCEO 80 ± 10 V Emitter-base voltage VEBO 8 V DC IC 2 Collector current Pulse ICP 3 A Continuous base current IB 0.5 A Collector power dissipation (1-device operation) PC 2.0 W Collector power dissipation (4-device operation) PT 4.0 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Array Configuration Industrial Applications Unit: mm JEDEC ― JEITA ― TOSHIBA 2-25A1A Weight: 2.1 g (typ.) 3 2 1 R1 R2 5 4 7 9 10 R1 ≈ 5 kΩ R2 ≈ 300 Ω 6 8 |
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