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2SK3437 Datasheet(PDF) 5 Page - Toshiba Semiconductor |
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2SK3437 Datasheet(HTML) 5 Page - Toshiba Semiconductor |
5 / 6 page 2SK3437 2006-11-08 5 Pulse width tw (S) rth − tw EAS – Tch Channel temperature (initial) Tch (°C) −15 V 15 V Test circuit Wave form IAR BVDSS VDD VDS RG = 25 Ω VDD = 90 V, L = 4.41 mH ⎟ ⎟ ⎠ ⎞ ⎜ ⎜ ⎝ ⎛ − ⋅ ⋅ ⋅ = VDD BVDSS BVDSS 2 I L 2 1 ΕAS Safe operating area Drain-source voltage VDS (V) 100 200 300 50 100 0 400 25 75 150 125 0.01 1 10 100 1000 0.1 1 100 100 μs * 1 ms * * Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 10 VDSS max DC operation Tc = 25°C ID max (pulsed) * ID max (continuous) * 0.001 1 0.1 10 μ 100 μ 10 1 m 10 m 100 m 1 10 Single pulse 0.2 0.1 0.05 0.02 0.01 Duty = 0.5 0.01 |
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