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2SK3398 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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2SK3398 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 6 page 2SK3398 2006-11-06 4 Case temperature Tc (°C) RDS (ON) − Tc Drain-source voltage VDS (V) IDR − VDS Drain-source voltage VDS (V) Capacitance – VDS Case temperature Tc (°C) Vth − Tc Case temperature Tc (°C) PD − Tc Total gate charge Qg (nC) Dynamic input/output characteristics 50 10 30 20 40 0 0 80 120 160 200 40 0 2.5 0.5 1.5 1.0 2.0 −40 −80 160 0 40 80 0 −40 −80 160 0 40 80 ID = 12 A 6 Common source VGS = 10 V pulse test 3 0.1 100 0.3 3 30 −0.2 0 −1.2 −0.6 −0.4 −0.8 −1.0 10 5 1 VGS = 1 V 10 1 Common source Tc = 25°C pulse test 3 100 300 1000 1 0.1 100 10 Ciss Coss Crss Common source VGS = 0 V f = 1 MHz Tc = 25°C 10 30 500 3000 0.3 0.5 3 5 30 50 5000 50 5 1 3 2 4 0 −80 0 40 80 120 160 −40 Common source VDS = 10 V ID = 1 mA pulse test 600 100 300 200 400 0 0 24 6 16 12 20 0 400 VDD = 80 V VGS VDS 200 Common source ID = 12 A Tc = 25°C pulse test 500 10 20 30 40 50 60 8 |
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