2SK3301

2006-11-10

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII)

2SK3301

Switching Regulatorand DC-DC Converter Applications

Characteristics

Symbol

Rating

Unit

Drain-source voltage

900

V

900

V

Gate-source voltage

±30

V

DC (Note 1)

1

Drain current

Pulse

(Note 1)

2

A

Drain power dissipation (Tc

= 25°C)

20

W

Single pulse avalanche energy

(Note 2)

140

mJ

Avalanche current

1

A

Repetitive avalanche energy (Note 3)

2.0

mJ

Channel temperature

150

°C

Storage temperature range

−55~150

°C

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage,

etc.) are within the absolute maximum ratings. Please design the

appropriate reliability upon reviewing the Toshiba Semiconductor

Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

6.25

°C/W

Thermal resistance, channel to ambient

125

°C/W

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 3: Repetitive rating: pulse width limited by max junction

temperature

This transistor is an electrostatic-sensitive device. Please handle with caution.

Unit: mm

JEDEC

―

JEITA

SC-64

TOSHIBA

2-7B1B

Weight: 0.36 g (typ.)

JEDEC

―

JEITA

SC-64

TOSHIBA

2-7J1B

Weight: 0.36 g (typ.)