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SI3460-XYY-GM Datasheet(PDF) 6 Page - Silicon Laboratories |
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SI3460-XYY-GM Datasheet(HTML) 6 Page - Silicon Laboratories |
6 / 22 page Si3460 6 Preliminary Rev. 0.4 3. Si3460 Electrical Specifications The following specifications apply to the Si3460 controller. Refer to Tables 1, 5, 6, and 7, the Si3460-EVB User’s Guide, and schematics for additional details about the electrical specifications of the Si3460-EVB reference design. Table 2. Recommended Operating Conditions* Description Symbol Test Conditions Min Typ Max Unit Operating temperature range TA –40 25 +85 °C Thermal impedance θJA No airflow 75 °C/W VDD input supply voltage VDD During all operating modes (detect, classification, disconnect) 2.7 3.3 3.6 V *Note: VDD = 2.7 to 3.6 V, –40 to +85 °C unless otherwise specified. Table 3. Absolute Maximum Ratings* Parameter Conditions Max Rating Unit Ambient temperature under bias –55 to +125 °C Storage Temperature –65 to +150 °C Voltage on RST or any I/O pin with respect to GND VDD > 2.2 V –0.3 to 5.8 V Voltage on VDD with respect to GND –0.3 to 4.2 V Maximum total current through VDD and GND 500 mA Maximum output current into GATE, CTRL1, CTRL2, 250KHZ, STATUS, ISENSE, RST, VSENSE, DETA (any I/O pin) 100 mA ESD tolerance Human Body Model –2 kV to +2 kV V Lead Temperature Soldering, 10 seconds maximum 260 °C *Note: Stresses above those listed in this table may cause permanent device damage. This is a stress rating only, and functional operation of the devices at these or any conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. |
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