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2SD1160 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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2SD1160 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 5 page 2SD1160 2006-11-21 3 Collector-emitter voltage VCE (V) IC – VCE Collector current IC (mA) hFE – IC Collector current IC (mA) VCE (sat) – IC Collector current IC (mA) VBE (sat) – IC 0 0 1.0 IB = 2 mA 0.2 0.4 2 4 8 0 10 14 0.6 6 12 0.8 Common emitter Tc = 25°C 3 4 5 6 8 10 10 50 100 300 1000 10 100 300 1000 30 Common emitter VCE = 2 V 30 3000 500 Tc = 100°C −25 25 100 1 100 300 1000 3000 30 0.03 0.05 0.1 0.3 0.5 25 Tc = −25°C Common emitter IC/IB = 50 10 100 300 1000 3000 30 0.2 0.5 1 3 5 Common emitter IC/IB = 50 100 25 Tc = −25°C Emitter-collector forward voltage VECF (V) IE – VECF 1000 0.4 0.8 1.2 1.4 0.2 10 50 100 300 500 IB = 0 25 Tc = 100°C 0.6 1.0 1.6 30 −25 Pulse width tw (s) rth – tw 1000 10 m 1 100 1 m 0.1 10 100 Curves apply only to limited areas of thermal resistance. (Single nonrepetitive pulse) Tc = 25°C 100 m 10 1000 1 |
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