2SC6076 datasheet(2/5 Pages) TOSHIBA

Part #	2SC6076

Description	Silicon NPN Epitaxial Type (PCT Process)

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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2 / 5 page

2SC6076

2006-11-16

2

Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Conditions

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 160 V, IE = 0

―

1.0

μA

Emitter cut-off current

IEBO

VEB = 9 V, IC = 0

―

1.0

μA

Collector-emitter breakdown voltage

V (BR) CEO

IC = 10 mA, IB = 0

80

―

V

hFE (1)

VCE = 2 V, IC = 1 mA

150

―

hFE (2)

VCE = 2 V, IC = 0.5 A

180

―

450

DC current gain

hFE (3)

VCE = 2 V, IC = 1 A

100

―

VCE (sat) (1) IC = 0.5 A, IB = 50 mA

―

0.3

V

Collector emitter saturation voltage

VCE (sat) (2) IC = 1 A, IB = 100 mA

―

0.5

V

Base-emitter saturation voltage

VBE (sat)

IC = 1 A, IB = 100 mA

―

1.5

V

Transition frequency

fT

VCE = 2 V, IC = 0.5 A

―

150

―

MHZ

Collector output capacitance

Cob

VCB = 10 V, IE = 0,f = 1MHZ

―

14

―

pF

Rise time

tr

―

0.05

―

Storage time

tstg

―

0.4

―

Switching time

Fall time

tf

IB1 = −IB2 = 100 mA

Duty cycle ≤ 1%

―

0.15

―

μs

Marking

20 μs

VCC = 24 V

Output

IB2

IB1

Input

Ｃ６０７６

Lot code

A line indicates

lead (Pb)-free

package or

lead (Pb)-free finish.

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