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2SJ148 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SJ148 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 5 page 2SJ148 2007-11-01 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±10 V, VDS = 0 ⎯ ⎯ ±100 nA Drain cut-off current IDSS VDS = −60 V, VGS = 0 ⎯ ⎯ −10 μA Drain-source breakdown voltage V (BR) DSS ID = −1 mA, VGS = 0 −60 ⎯ ⎯ V Gate threshold voltage Vth VDS = −10 V, ID = −1 mA −2 ⎯ −3.5 V Forward transfer admittance ⎪Yfs⎪ VDS = −10 V, ID = −50 mA 100 ⎯ ⎯ mS Drain-source ON resistance RDS (ON) ID = −50 mA, VGS = −10 V ⎯ 1.3 2.0 Ω Drain-source ON voltage VDS (ON) ID = −50 mA, VGS = −10 V ⎯ −65 −100 mV Input capacitance Ciss VDS = −10 V, VGS = 0, f = 1 MHz ⎯ 73 85 pF Reverse transfer capacitance Crss VDS = −10 V, VGS = 0, f = 1 MHz ⎯ 15 22 pF Output capacitance Coss VDS = −10 V, VGS = 0, f = 1 MHz ⎯ 48 60 pF Rise time tr ⎯ 8 ⎯ Turn-on time ton ⎯ 14 ⎯ Fall time tf ⎯ 35 ⎯ Switching time Turn-off Time toff VIN: tr, tf < 5 ns D.U. <= 1% (Zout = 50 Ω) ⎯ 100 ⎯ ns This transistor is the electrostatic sensitive device. Please handle with caution. |
Similar Part No. - 2SJ148_07 |
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Similar Description - 2SJ148_07 |
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