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2SC5352 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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2SC5352 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 4 page 2SC5352 2006-11-10 3 Collector-emitter voltage VCE (V) IC – VCE hFE – IC Collector current IC (A) Collector current IC (A) VBE (sat) – IC VCE (sat) – IC Collector current IC (A) Base-emitter voltage VBE (V) IC – VBE Collector-emitter voltage VCE (V) Safe Operating Area 10 6 4 2 0 8 4 6 8 2 0 10 IB = 0.05 A Common emitter Tc = 25°C 0.4 1.2 0.6 0.8 0.2 0.1 1.0 Common emitter VCE = 5 V Tc = 100°C 25 20 16 8 4 0 0.5 1 0 1.5 −55 12 30 3 1 10 0.1 100 30 Tc = 100°C −55 25 Common emitter VCE = 5 V 1 5 10 50 3 5 0.3 0.5 5 0.1 1 0.3 Common emitter IC/IB = 8 0.1 10 3 Tc = 100°C −55 25 5 1 0.3 3 0.5 0.5 10 5 0.1 1 0.3 Common emitter IC/IB = 8 0.1 10 3 Tc = 100°C −55 25 5 1 0.3 3 0.5 0.5 10 0.01 1 3 1000 3 30 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. IC max (continuous) IC max (pulsed)* VCEO max DC operation Tc = 25°C 1 ms* 10 ms* 100 ms* 1 0.3 0.1 0.03 10 30 100 300 100 μs* 10 μs* 10 |
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