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2SC5122 Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part # 2SC5122
Description  Silicon NPN Triple Diffused Type
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC5122 Datasheet(HTML) 3 Page - Toshiba Semiconductor

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2SC5122
2006-11-10
3
Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (mA)
hFE – IC
Collector current IC (mA)
VCE (sat) – IC
Base-emitter voltage VBE (V)
IC – VBE
Ambient temperature Ta (°C)
PC – Ta
Safe Operating Area
Collector-emitter voltage VCE (V)
400
0
Common
emitter
Ta = 25°C
6
8
10
600
100
500
700
300
IB = 50 μA
1 mA
200
4
2
10
20
30
40
50
800
900
Tc = 100°C
Common emitter
IC/IB = 5
280
120
160
200
240
−25
80
25
10
20
50
40
30
0
0
40
0
1.0
0.2
0.4
0
120
240
80
40
160
200
0.6
0.8
Common emitter
VCE = 10 V
1
10
100
1
10
100
−25
25
Tc = 100°C
0.1
3
30
25
Common emitter
VCE = 10 V
0
60
10
20
30
0
0.6
0.8
1.4
0.4
0.2
Tc = 100°C
−25
1.0
1.2
40
50
IC max (pulsed)*
100 μs*
100 ms*
*: Single nonrepetitive
pulse Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
1
3
10
300
3
5
1
50
30
100
1000
10
500
100
30
300
10 ms*
IC max (continuous)
VCEO max
DC operation
Ta = 25°C
1 ms*


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