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2SC5122 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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2SC5122 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 4 page 2SC5122 2006-11-10 3 Collector-emitter voltage VCE (V) IC – VCE Collector current IC (mA) hFE – IC Collector current IC (mA) VCE (sat) – IC Base-emitter voltage VBE (V) IC – VBE Ambient temperature Ta (°C) PC – Ta Safe Operating Area Collector-emitter voltage VCE (V) 400 0 Common emitter Ta = 25°C 6 8 10 600 100 500 700 300 IB = 50 μA 1 mA 200 4 2 10 20 30 40 50 800 900 Tc = 100°C Common emitter IC/IB = 5 280 120 160 200 240 −25 80 25 10 20 50 40 30 0 0 40 0 1.0 0.2 0.4 0 120 240 80 40 160 200 0.6 0.8 Common emitter VCE = 10 V 1 10 100 1 10 100 −25 25 Tc = 100°C 0.1 3 30 25 Common emitter VCE = 10 V 0 60 10 20 30 0 0.6 0.8 1.4 0.4 0.2 Tc = 100°C −25 1.0 1.2 40 50 IC max (pulsed)* 100 μs* 100 ms* *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 1 3 10 300 3 5 1 50 30 100 1000 10 500 100 30 300 10 ms* IC max (continuous) VCEO max DC operation Ta = 25°C 1 ms* |
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