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2SC5122 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SC5122 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 4 page  2SC5122 2006-11-10 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 400 V, IE = 0 ― ― 1 μA Emitter cut-off current IEBO VEB = 7 V, IC = 0 ― ― 1 μA Collector-emitter breakdown voltage V (BR) CEO IC = 1 mA, IB = 0 400 ― ― V hFE (1) VCE = 5 V, IC = 1 mA 80 ― ― DC current gain hFE (2) VCE = 5 V, IC = 20 mA 100 ― 300 Collector-emitter saturation voltage VCE (sat) IC = 20 mA, IB = 0.5 mA ― 0.4 1.0 V Base-emitter voltage VBE VCE = 5 V, IC = 20 mA ― 0.7 1.0 V Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ― 4 ― pF Marking C5122 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) |
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