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2SC5085_07 Datasheet (HTML) - Toshiba Semiconductor

Part No. 2SC5085_07
Description  Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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2SC5085
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5085
VHF~UHF Band Low Noise Amplifier Applications
• Low noise figure, high gain.
• NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
12
V
Emitter-base voltage
VEBO
3
V
Base current
IB
40
mA
Collector current
IC
80
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Microwave Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Transition frequency
fT
VCE = 10 V, IC = 20 mA
5
7
GHz
⎪S21e
2 (1)
VCE = 10 V, IC = 20 mA, f = 500 MHz
16.5
Insertion gain
⎪S21e
2 (2)
VCE = 10 V, IC = 20 mA, f = 1 GHz
7.5
11
dB
NF (1)
VCE = 10 V, IC = 5 mA, f = 500 MHz
1
Noise figure
NF (2)
VCE = 10 V, IC = 5 mA, f = 1 GHz
1.1
2
dB
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 10 V, IE = 0
1
μA
Emitter cut-off current
IEBO
VEB = 1 V, IC = 0
1
μA
DC current gain
hFE
(Note 1)
VCE = 10 V, IC = 20 mA
80
240
Output capacitance
Cob
1.0
pF
Reverse transfer capacitance
Cre
VCB = 10 V, IE = 0, f = 1 MHz (Note 2)
0.65
1.15
pF
Note 1: hFE classification O: 80~160, Y: 120~240
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
Unit: mm
JEDEC
JEITA
SC-70
TOSHIBA
2-2E1A
Weight: 0.006 g (typ.)



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