2SC4118 datasheet(2/4 Pages) TOSHIBA

Part #	2SC4118

Description	Silicon NPN Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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2 / 4 page

2SC4118

2007-11-01

2

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 35 V, IE = 0

⎯

0.1

μA

Emitter cut-off current

IEBO

VEB = 5 V, IC = 0

⎯

0.1

μA

hFE (1) (Note) VCE = 1 V, IC = 100 mA

70

⎯

400

DC current gain

hFE (2) (Note) VCE = 6 V, IC = 400 mA

25

⎯

Collector-emitter saturation voltage

VCE (sat)

IC = 100 mA, IB = 10 mA

⎯

0.1

0.25

V

Base-emitter voltage

VBE

VCE = 1 V, IC = 100 mA

⎯

0.8

1.0

V

Transition frequency

fT

VCE = 6 V, IC = 20 mA

⎯

300

⎯

MHz

Collector output capacitance

Cob

VCB = 6 V, IE = 0, f = 1 MHz

⎯

7

⎯

pF

Note: hFE (1) classification O(O): 70~140, Y(Y): 120~240, GR(G): 200~400 (

) Marking Symbol

hFE (2) classification O: 25 (min), Y: 40 (min), GR: 70 (min)

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