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2SC3423 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # 2SC3423
Description  Silicon NPN Epitaxial Type (PCT Process) Audio Frequency Amplifier Applications
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC3423 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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2SC3423
2006-11-09
2
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 150 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
0.1
μA
DC current gain
hFE
(Note)
VCE = 5 V, IC = 10 mA
80
240
Collector-emitter saturation voltage
VCE (sat)
IC = 10 mA, IB = 1 mA
1.0
V
Base-emitter voltage
VBE
VCE = 5 V, IC = 10 mA
0.8
V
Transition frequency
fT
VCE = 5 V, IC = 10 mA
200
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
1.8
pF
Note: hFE classification O: 80 to 160, Y: 120 to 240
Marking
C3423
Part No. (or abbreviation code)
Characteristics indicator
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.


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