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1SS196 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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1SS196 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 3 page 1SS196 2007-11-01 1 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS196 Ultra High Speed Switching Application Small package : SC-59 Low forward voltage : VF (3) = 0.9V (typ.) Fast reverse recovery time: trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 mA Average forward current IO 100 mA Surge current (10ms) IFSM 2 A Power dissipation P 150 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55 ∼125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Circuit Test Condition Min Typ. Max Unit VF (1) ― IF = 1mA ― 0.60 ― VF (2) ― IF = 10mA ― 0.72 ― Forward voltage VF (3) ― IF = 100mA ― 0.90 1.20 V IR (1) ― VR = 30V ― ― 0.1 Reverse current IR (2) ― VR = 80V ― ― 0.5 μA Total capacitance CT ― VR = 0, f = 1MHz ― 0.9 3.0 pF Reverse recovery time trr ― IF = 10mA (Fig.1) ― 1.6 4.0 ns Marking JEDEC TO-236MOD EIAJ SC-59 TOSHIBA 1-3G1B Weight: 0.012g Unit: mm |
Similar Part No. - 1SS196_07 |
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Similar Description - 1SS196_07 |
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