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STB8NM60D Datasheet(PDF) 4 Page - STMicroelectronics |
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STB8NM60D Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 13 page Electrical characteristics STB8NM60D - STP8NM60D 4/13 Rev2 Table 6. Switching times Symbol Parameter Test Condictions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time VDD=300V, ID=2.5A, RG=4.7Ω, VGS=10V (see Figure 12) 13 10 26 8 ns ns ns ns td(off) tf tc Turn-off Delay Time Fall Time Cross-over Time VDD=480V, ID=5A, RG=4.7Ω, VGS=10V (see Figure 12) 8 8 14 ns ns ns Table 7. Source drain diode Symbol Parameter Test Condictions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain Current Source-drain Current (pulsed) 5 20 A A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on Voltage ISD=5A, VGS=0 1.5 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD=5A, di/dt = 100A/µs, VDD=50 V, Tj=25°C 107 330 6 ns nC A trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD=5A, di/dt = 100A/µs, VDD=50 V, Tj=150°C 178 640 7 ns nC A |
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