NMOS linear image sensor

S5930/S5931 series

OXIDATION SILICON

N TYPE SILICON

P TYPE SILICON

S5930 SERIES: a=50 µm, b=45 µm

S5931 SERIES: a=25 µm, b=20 µm

b

a

KMPDC0020EA

Figure 1 Equivalent circuit

Vss

START

st

CLOCK

CLOCK

1

2

ACTIVE

PHOTODIODE

SATURATION

CONTROL GATE

SATURATION

CONTROL DRAIN

DUMMY DIODE

DUMMY VIDEO

ACTIVE VIDEO

END OF SCAN

DIGITAL SHIFT RE

GISTER

(MOS SHIFT RE

GISTER)

Figure 2 Active area structure

KMPDA0132EA

s

Absolute maximum ratings

Parameter

Symbol

Value

Unit

Input pulse (φ1, φ2, φst) voltage

Vφ

15

V

Topr

-40 to +65

°C

Storage temperature

Tstg

-40 to +85

°C

*1: No condensation. Ambient temperature should be less than the element cooling temperature +35 °C. (Example: Ambient

temperature should be less than 35 °C in order to keep the element temperature at 0 °C.)

s

Specifications (Ta=25 °C, unless otherwise noted)

S5930 series

S5931 series

Parameter

Symbol

Min.

Typ.

Max.

Min.

Typ.

Max.

Unit

Pixel pitch

-

-50-

-25

-

µm

Pixel height

-

-

2.5

-

-

2.5

-

mm

Spectral response range

(10 % of peak)

λ

200 to 1000

200 to 1000

nm

Peak sensitivity wavelength

λp

-

600

-

-

600

-

nm

25 °C

-

0.2

0.6

-

0.1

0.3

Photodiode dark current* 0 °C

-

0.006

0.018

-

0.003

0.009

pA

Cph

-

20

-

-

10

-

pF

Esat

-

180

-

-

180

-

mlx · s

Qsat

-

50

-

-

25

-

pC

PRNU

--

±3

--

±3

%

*2: Vb=2.0 V, Vφ=5.0 V

*3: 2856 K, tungsten lamp

*4: 50 % of saturation, excluding the start pixel and last pixel