Si PIN photodiode

S2744/S3588-08, -09

HAMAMATSU PHOTONICS K.K., Solid State Division

1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218

Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658

France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10

United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777

North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01

Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741

Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.

Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K.

s

s

s

s

s Dimensional outlines (unit: mm)

10 nA

1 pA

100 pA

1 nA

100 nA

10 pA

AMBIENT TEMPERATURE (˚C)

-20

60

80

020

40

REVERSE VOLTAGE (V)

10 pF

0.1

1

10

100

100 pF

1 nF

10 nF

(Typ. Ta=25 ˚C, f=1 MHz)

S2744-08/-09

S3588-08/-09

0

200

400

600

800

1000

+1.0

+0.5

(Typ.)

+1.5

-0.5

WAVELENGTH (nm)

WAVELENGTH (nm)

0

200

400

600

0.1

0.2

0.3

0.4

0.5

800

1000

1200

0.6

0.7

(Typ. Ta=25 ˚C)

S2744/S3588-08

S2744/S3588-09

KPINA0039EB

KPINA0042EB

s Spectral response

KPINB0265EB

KPINB0093EC

sDark current vs. ambient temperature

sPhotosensitivitytemperaturecharacteristic

s Dark current vs. reverse voltage

s Terminal capacitance vs. reverse voltage

REVERSE VOLTAGE (V)

1 pA

0.1

1

10

100

10 pA

100 pA

1 nA

10 nA

(Typ. Ta=25 ˚C)

Cat. No. KPIN1049E04

Mar. 2006 DN

KPINB0220EA

KPINB0221EA

KPINB0222EB

 0.45

LEAD

PHOTOSENSITIVE

SURFACE

2.5

20.0

WHITE CERAMIC

2.0

27.0

ACTIVE AREA

The coating resin may extend a

maximum of 0.1 mm beyond the

upper surface of the package.

PHOTOSENSITIVE

SURFACE

ACTIVE AREA

 0.45

LEAD

30.0

1.2

34.0

WHITE CERAMIC

1.1

The coating resin may extend a

maximum of 0.1 mm beyond the

upper surface of the package.