Si PIN photodiode

S3204/S3584 series

HAMAMATSU PHOTONICS K.K., Solid State Division

1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218

Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658

France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10

United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777

North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01

Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741

Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.

Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K.

s

s

s

s

s Dimensional outlines (unit: mm)

10 nA

1 pA

100 pA

1 nA

100 nA

10 pA

(Typ.)

AMBIENT TEMPERATURE (˚C)

-20

60

80

020

40

REVERSE VOLTAGE (V)

10 pF

0.1

1

10

1000

100

100 pF

1 nF

10 nF

(Typ. Ta=25 ˚C, f=1 MHz)

S3584-08/-09

S3204-05/-06

S3204-08/-09

S3584-05/-06

0

200

400

600

800

1000

+1.0

+0.5

(Typ.)

+1.5

-0.5

WAVELENGTH (nm)

WAVELENGTH (nm)

0

200

400

600

0.1

0.2

0.3

0.4

0.5

800

1200

1000

0.6

0.7

(Typ. Ta=25 ˚C)

S3204/S3584-08

S3204/S3584-05

KPINA0040EB

KPINA0041EB

s Spectral response

KPINB0227EA

KPINB0093EC

s Dark current vs. ambient

temperature

sPhotosensitivitytemperaturecharacteristic

s Dark current vs. reverse voltage

s Terminal capacitance vs. reverse voltage

REVERSE VOLTAGE (V)

0.1

1

10

1000

100

100 pA

1 nA

100 nA

10 nA

(Typ. Ta=25 ˚C)

S3584-08/-09

S3204-05/-06

S3204-08/-09

S3584-05/-06

Cat. No. KPIN1051E05

Mar. 2006 DN

KPINB0228EB

KPINB0229EB

KPINB0230EB

WHITE CERAMIC

ACTIVE AREA

0.45

LEAD

18.0

3.4

25.5

PHOTOSENSITIVE

SURFACE

Type No.

S3204-05/-06 1.0

1.2

a

S3204-08/-09

1.75

WHITE CERAMIC

0.45

LEAD

3.4

28.0

35.6

1.75

ACTIVE AREA

PHOTOSENSITIVE

SURFACE

Type No.

S3584-05/-06 1.0

1.2

a

S3584-08/-09

s Spectral response (without window)

KPINB0264EA

WAVELENGTH (nm)

0

200

400

600

0.1

0.2

0.3

0.4

0.5

800

1200

1000

0.6

0.7

(Typ. Ta=25 ˚C)

S3204/S3584-09

S3204/S3584-06

2