HAMAMATSU PHOTONICS K.K., Solid State Division

1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com

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Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658

France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10

United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777

North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01

Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741

Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.

Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K.

Si PIN photodiode

S2506/S6775/S6967 series, S6786

Cat. No. KPIN1048E02

Jun. 2006 DN

s

s

s

s

s Dimensional outline (unit: mm, tolerance unless otherwise noted: ±0.1)

s Spectral response

1 pA

10 pA

100 pA

1 nA

10 nA

10 µA

-20

0

20

40

60

(Typ.)

80

100 nA

1 µA

S6786

S2506-02/-04

S6967/-01

S6775/-01

1 pF

10 pF

100 pF

1 nF

0.1

1

10

100

REVERSE VOLTAGE (V)

(Typ. Ta=25 ˚C, f=1 MHz)

1 pF

10 pF

100 pF

1 nF

0.1

1

10

100

(Typ. Ta=25 ˚C, f=1 MHz)

S6967/-01

S6775/-01

S2506-02/-04

S6786

1.0

0.5

3.5 ± 0.2

7.0 ± 0.2

5.08

(0.3)

(0.3)

(0.5)

(0.5)

(0.4)

(0.4)

(0.6)

(0.6)

1.0

1.0

CENTER OF

ACTIVE AREA

DETAILS OF LEAD ROOT

ACTIVE AREA

b

2.7 ± 0.2 0.2 MAX.

0.5

1.4

1.1

INCIDENT LIGHT

a

Type No.

3.65 ± 0.2

S6775/S6967

series

2.8 ± 0.2

b

S2506 series

S6786

s Dark current vs. ambient temperature s Terminal capacitance vs.

reverse voltage

KPINB0169EB

KPINB0170EB

KPINA0084EB

90˚

80˚

70˚

60˚

50˚

30˚

RELATIVE SENSITIVITY

40˚

20˚

10˚

0˚

10˚

20˚

90˚

80˚

70˚

60˚

50˚

30˚

40˚

80 %

100 %

20 %

40 %

60 %

(Typ. Ta=25 ˚C)

s Directivity (S2506-02)

KPINB0065EB

REVERSE VOLTAGE (V)

1 pA

10 pA

100 pA

1 nA

10 nA

0.01

0.1

1

10

100

(Typ. Ta=25 ˚C)

S6786

S6967/-01

S2506-02/-04

S6775/-01

s Dark current vs. reverse voltage

KPINB0168EB

0

200

400

600

800

1000

+1.0

+0.5

(Typ.)

+1.5

-0.5

s Photo sensitivity temperature characteristic

(S2506-02)

KPINB0063EC

WAVELENGTH (nm)

0

0.1

0.2

0.3

0.4

0.8

0.7

200

400

600

800

1000

(Typ. Ta=25 ˚C)

0.5

0.6

S2506-04

S2506-02

S6786

QE=100 %

KPINB0348EA

WAVELENGTH (nm)

0

0.1

0.2

0.3

0.4

0.8

0.7

200

400

600

800

1000

(Typ. Ta=25 ˚C)

0.5

0.6

S6967

S6967-01

QE=100 %

S6775

S6775-01

KPINB0349EA

S2506 series, S6786

S6775/S6967 series

2