GaAs PIN photodiode array

G8921-01

HAMAMATSU PHOTONICS K.K., Solid State Division

1126-1 Ichino-cho,

Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218

Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658

France: Hamamatsu Photonics France S.A.R.L.:

19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10

United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777

North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01

Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741

Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.

Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©200

4 Hamamatsu Photonics K.K.

Cat. No. KGPD1009E02

Jan. 2004 DN

0.15

0.25

6.4

ACTIVE AREA

CATHODE

0.06 × 4 ch

ANODE

2

I Spectral response

KGPDB0048EA

I Dark current vs. reverse voltage

KGPDB0049EA

I Terminal capacitance vs. reverse voltage

KGPDB0050EA

I Dimensional outline (unit: mm)

KGPDA0017EA

0

0.1

0.2

0.3

0.4

0.5

0.6

300

500

600

700

800

900

1000

400

(Typ. Ta=25 ˚C)

WAVELENGTH (nm)

REVERSE VOLTAGE (V)

(Typ. Ta=25 ˚C)

1

0.1

0.01

10 fA

100 fA

100 pA

10 pA

1 pA

10

100

REVERSE VOLTAGE (V)

(Typ. Ta=25 ˚C)

1

0.1

0.01

100 fF

10 pF

1 pF

10

100

I Cross-talk characteristic

KGPDB0051EA

0

100

200

300

400

500

0.001

1000

100

10

1

0.1

0.01

POSITION (µm)

(Typ. Ta=25 ˚C,

λ=830 nm, step: 5 µm, Pin=20 nW, spot light size: 10 µm)

n ch

n+1 ch